• Charles University in Prague, Group of Surface Science
  • Materials Science Beamline, Synchrotron Elettra, Trieste, Italy
  • Academy of Sciences of the Czech Republic, Prague
  • National Institute for Materials Science Tsukuba, Japan
  • Synchrotron SPring-8, Sayo, Japan
  • other Japan institutes and companies: Meiji University, Kyushu University, Kyoto University, LEAP, Gene & Coherent Technologies, Nakayama Corporation
  • Heinrich-Heine-Universität Düsseldorf, Germany
  • Lehrstuhl fuer Physikalische Chemie II, Friedrich-Alexander-Universitaet Erlangen-Nuernberg
  • Department of Solid State Physics, University of Lodz, Poland
  • Department of Physics, University of California at Davis, USA
  • ALS Synchtrotron, Lawrence Berkeley National Laboratory, Berkeley, USA
  • Chonbuk National University, Jeonju, South Korea
  • etc...

Some papers where KolXPD was used

This list excludes my references
  • A. L. Yang, Y. Yamashita, M. Kobata, T. Matsushita, H. Yoshikawa et al., Investigation of the near-surface structures of polar InN films by chemicalstate-discriminated hard X-ray photoelectron diffraction, Appl. Phys. Lett. 102 (2013) 031914
  • J.R. Williams, I. Píš, M. Kobata, A. Winkelmann, T. Matsushita, Y. Adachi, N. Ohashi, K. Kobayashi, Observation and simulation of hard x ray photoelectron diffraction to determine polarity of polycrystalline zinc oxide films with rotation domains, Journal of Applied Physics 111 (2012) 033525
  • J.R. Williams, M. Kobata, I. Píš, E. Ikenaga, T. Sugiyama, K. Kobayashi, N. Ohashi, Polarity determination of wurtzite-type crystals using hard x-ray photoelectron diffraction, Surface Science 605 (2011) 1336
  • M. Kobata, I. Píš, H. Iwai, H. Yamazui, H. Takahashi, M. Suzuki, H. Matsuda, H. Daimon, K. Kobayashi, Development of the hard-X-ray angle Resolved X-ray Photoemission spectrometer for Laboratory use, Analytic Sciences February 2010, Vol. 26
  • I. Píš, M. Kobata, T. Matsushita, H. Nohira, K. Kobayashi, Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0–7-nm-Thick SiO2 Layer, Applied Physics Express 3 (2010) 056701
  • Nemšák, S., Skála, T., Yoshitake, M., Prince, K.C.,  Matolín, V., Depth profiling of ultra-thin alumina layers grown on Co(0001), Journal of Physics: Condensed Matter 25 (2013) 095004
  • Nemšák, S., Skála, T., Yoshitake, M., Tsud, N., Prince, K.C., Matolín, V., A photoelectron spectroscopy study of ultra-thin epitaxial alumina layers grown on Cu(111) surface, Surface Science 604 (2010) 2073
  • Nemšák, S., Skála, T., Yoshitake, M., Tsud, N., Kim, T., Yagyu, S., Matolín, V., Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study, Surface and Interface Analysis 42 (2010) 1581
  • Yoshitake, M., Blumentrit, P., Nemšák, S., X-ray photoelectron spectroscopic study on interface bonding between Pt and Zn- and O-terminated ZnO, Journal of Vacuum Science and Technology A 31 (2013) 020601
  • Blumentrit, P., Yoshitake, M., Nemšák, S., Kim, T., Nagata, T., XPS and UPS study on Band Alignment at Pt-Zn-terminated ZnO(0001) Interface, Applied Surface Science 258 (2011) 780